Lithography for Manufacturing Integrated Circuits Beyond 180 nm

Autor: R. E. Gleason
Rok vydání: 1996
Zdroj: Extreme Ultraviolet Lithography (TOPS).
DOI: 10.1364/eul.1996.lm22
Popis: The integrated circuit industry will continue to rely on optical lithography to print patterns as small as 130 nm, and will try to extend its capability to even smaller dimensions. This will require improved mask technology, whose development has lagged the other elements of optical lithography. Potential successors to optical lithography need significantly more complicated masks, and those with large reduction ratios have an advantage. The most difficult technical challenges they face are to make masks without defects, and to keep them clean.
Databáze: OpenAIRE