Memories of tomorrow

Autor:	Dietmar Essex Junction Gogl, William Robert Reohr, Yu Lu, Stuart S. P. Parkin, F. Pesavento, William J. Gallagher, G. Muller, C. Arndt, R. Robertazzi, K. Lewis, Hans-Heinrich Viehmann, H. Honigschmid, Li-Kong Wang, Roy Edwin Scheuerlein, Philip L. Trouilloud, S. Lammers
Rok vydání:	2002
Předmět:	Random access memory Engineering Hardware_MEMORYSTRUCTURES business.industry Spin-transfer torque Electrical engineering Short read Electronic Optical and Magnetic Materials Tunnel magnetoresistance Hardware_INTEGRATEDCIRCUITS Electronic engineering Bubble memory Electrical and Electronic Engineering business Instrumentation Quantum tunnelling
Zdroj:	IEEE Circuits and Devices Magazine. 18:17-27
ISSN:	8755-3996
DOI:	10.1109/mcd.2002.1035347
Popis:	With the promise of nonvolatility, practically infinite write endurance, and short read and write times, magnetic tunnel junction magnetic random access memory could become a future mainstream memory technology.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5c1fb0afe3b9ce6b53313164e0e57106 https://doi.org/10.1109/mcd.2002.1035347 Zobrazit plný text záznamu