An ab initio approach on superconducting properties of Mo3X(X = Si,Ga,Ge) compounds
Autor: | R. Krithiga, G. Subhashree, Sambasivam Sankar |
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Rok vydání: | 2015 |
Předmět: | |
Zdroj: | Modern Physics Letters B. 29:1550094 |
ISSN: | 1793-6640 0217-9849 |
DOI: | 10.1142/s0217984915500943 |
Popis: | Self-consistent first principles calculations on type II weakly coupled superconducting [Formula: see text] compounds of A15 phase are performed to understand their fundamental characteristics of the electronic, thermal and superconducting properties. The bulk modulus [Formula: see text], Debye temperature [Formula: see text], density of states (DOS) [Formula: see text], electron–phonon coupling constant [Formula: see text], superconducting transition temperature [Formula: see text], and electronic specific heat coefficient [Formula: see text] have been computed in terms of the electronic structure results, obtained by using the tight-binding linear muffin-tin orbital method. It is observed that all the three materials have their electronic properties dominated by d-orbital at Fermi energy. Thermal and superconducting properties calculated here are found to corroborate well with the experimental results of literature. |
Databáze: | OpenAIRE |
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