An ab initio approach on superconducting properties of Mo3X(X = Si,Ga,Ge) compounds

Autor: R. Krithiga, G. Subhashree, Sambasivam Sankar
Rok vydání: 2015
Předmět:
Zdroj: Modern Physics Letters B. 29:1550094
ISSN: 1793-6640
0217-9849
DOI: 10.1142/s0217984915500943
Popis: Self-consistent first principles calculations on type II weakly coupled superconducting [Formula: see text] compounds of A15 phase are performed to understand their fundamental characteristics of the electronic, thermal and superconducting properties. The bulk modulus [Formula: see text], Debye temperature [Formula: see text], density of states (DOS) [Formula: see text], electron–phonon coupling constant [Formula: see text], superconducting transition temperature [Formula: see text], and electronic specific heat coefficient [Formula: see text] have been computed in terms of the electronic structure results, obtained by using the tight-binding linear muffin-tin orbital method. It is observed that all the three materials have their electronic properties dominated by d-orbital at Fermi energy. Thermal and superconducting properties calculated here are found to corroborate well with the experimental results of literature.
Databáze: OpenAIRE