Kinetics study of vacancy-oxygen-related defects in monocrystalline solar silicon
| Autor: | Vincent Quemener, L.I. Murin, B. G. Svensson, Edouard Monakhov, F. Herklotz, B. Raeissi |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Silicon Kinetics chemistry.chemical_element Infrared spectroscopy Condensed Matter Physics Dissociation (chemistry) Electronic Optical and Magnetic Materials Monocrystalline silicon Condensed Matter::Materials Science Crystallography chemistry Chemical physics Vacancy defect Molecular vibration Irradiation |
| Zdroj: | physica status solidi (b). 251:2197-2200 |
| ISSN: | 0370-1972 |
| DOI: | 10.1002/pssb.201400155 |
| Popis: | In this work, diffusion and dissociation mechanisms related to the formation and evolution of vacancy–oxygen complexes have been studied. Czochralski-grown silicon samples have been irradiated at room temperature using fast electrons resulting in the formation of several defects including vacancy–oxygen complexes (VO). The samples were isothermally annealed at different temperatures in the range of 370–470 C. Fourier-transform infrared spectroscopy has been employed to measure the local vibrational modes associated with the individual defects. The evolution and generation kinetics of vacancy–oxygen complexes have been simulated within the framework of the theory for diffusion-limited reactions and compared with the experimental data. |
| Databáze: | OpenAIRE |
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