Epitaxial growth of gallium arsenide thin films by spray pyrolysis using a single-source organometallic precursor

Autor:	Thomas N. Blanton, A. J. Filo, Alex A. Wernberg, David J. Lawrence, Henry J. Gysling
Rok vydání:	1993
Předmět:	Chemistry Analytical chemistry Crystal growth Condensed Matter Physics Epitaxy Gallium arsenide Inorganic Chemistry Secondary ion mass spectrometry chemistry.chemical_compound Hall effect X-ray crystallography Materials Chemistry Thin film Pyrolysis
Zdroj:	Journal of Crystal Growth. 131:176-180
ISSN:	0022-0248
DOI:	10.1016/0022-0248(93)90411-o
Popis:	Epitaxial films of gallium arsenide were grown on (100) GaAs at 520–540°C from the single source organometallic precursor [(n-Bu) 2 Ga(μ-As(t-Bu) 2 )] 2 using a modified spray pyrolysis process. The epitaxial nature of the films was established by X-ray diffraction and Rutherford backscattering analyses. Secondary ion mass spectrometry analysis indicated an accumulation of carbon and oxygen at the film-substrate interface. Resistivity and Hall effect measurements suggest that the films are highly compensated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5bfe20f046ec4beb0da0039dad655823 https://doi.org/10.1016/0022-0248(93)90411-o Zobrazit plný text záznamu