Carbon Nanotube Deposition using Helicon Plasma CVD at Low Temperature

Autor:	Masakazu Muroyama, Ichiro Saito, Kouji Inoue, Takao Yagi
Rok vydání:	2002
Předmět:	Helicon Materials science Chemical engineering law Deposition (phase transition) Substrate (electronics) Chemical vapor deposition Activation energy Carbon nanotube Layer (electronics) Catalysis law.invention
Zdroj:	MRS Proceedings. 728
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-728-s8.12
Popis:	We developed a novel growth method of aligned carbon nanotubes. Aligned carbon nanotubes are grown on a metal catalyst on a glass substrate using biased Helicon plasma chemical vapor deposition (HPECVD) of CH4/H2 gases from 400 C to 500 C. The Helicon plasma source is one of the high-density plasma sources and is promising for low temperature carbon deposition. A Ni film was used as a catalyst to reduce the activation energy of the nanotubes' growth. The carbon nanotubes were deposited on the nickel catalysis layer selectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5bf0cdc54a0b8bf356f53c5211342245 https://doi.org/10.1557/proc-728-s8.12 Zobrazit plný text záznamu Full text from SpringerLink