Formation of p—n junctions and ohmic contacts with GaAs by laser solid-phase diffusion
| Autor: | A V Pokhmurskaya, A.Yu. Bonchik, G V Savitskii, G. N. Mikhailova, S. G. Kiyak |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Co2 laser
Materials science business.industry chemistry.chemical_element Statistical and Nonlinear Physics Phase diffusion Zinc Radiation Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention chemistry law Optoelectronics Electrical and Electronic Engineering Diffusion (business) business Ohmic contact Voltage |
| Zdroj: | Quantum Electronics. 25:85-86 |
| ISSN: | 1468-4799 1063-7818 |
| DOI: | 10.1070/qe1995v025n01abeh000293 |
| Popis: | An experimental investigation was made of the electrophysical properties of p—n junctions and ohmic contacts formed by laser solid-phase diffusion of, respectively, zinc and a contact group of elements (Au—Au : Ge) in a plate of n-type GaAs. The diffusion was induced by radiation from a cw CO2 laser. The zero-bias resistance of the p—n junctions was ~1010 Ω and the leakage current did not exceed 1 nA under a reverse bias voltage of 8 V. A typical resistance of the nonrectifying contacts was 5×10-7 Ω cm2. |
| Databáze: | OpenAIRE |
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