Drain bias dependence of the frequency limit of GaAs FET's

Autor:	Soong Hak Lee, D.E. Dawson, L.E. Dickens
Rok vydání:	1984
Předmět:	Materials science business.industry Electrical engineering Optoelectronics Breakdown voltage Field-effect transistor Limit (mathematics) Electrical and Electronic Engineering Power MOSFET business Microwave Electronic Optical and Magnetic Materials
Zdroj:	IEEE Transactions on Electron Devices. 31:1068-1071
ISSN:	0018-9383
DOI:	10.1109/t-ed.1984.21662
Popis:	Microwave f T measurements were made and compared to a model that confirmed lateral spreading as proposed by Wemple et al. to explain the increased breakdown voltage of GaAs power FET's compared to bulk breakdown. The model provides a useful tool for device diagnosis as well as evaluation of the frequency limit f T .
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5beb1894f4b71446f3d71f32eca705b1 https://doi.org/10.1109/t-ed.1984.21662 Zobrazit plný text záznamu