X-ray photoelectron spectroscopy of gallium nitride films grown by radical-beam gettering epitaxy
| Autor: | M. B. Kotlyarevsky, I. V. Rogozin |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Materials science
Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Gallium nitride Condensed Matter Physics Epitaxy Nitrogen Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry.chemical_compound Crystallography X-ray photoelectron spectroscopy chemistry Getter X-ray crystallography Chemical composition |
| Zdroj: | Semiconductors. 41:555-559 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | Thin GaN films were grown on GaAs(111) substrates by radical-beam gettering epitaxy. The structural quality of the films was studied by high-resolution x-ray diffraction. The chemical composition of the GaAs surface and GaN film was studied by x-ray photoelectron spectroscopy. It is shown that Ga-N and As-N bonds are formed on the GaAs surface at initial growth stages at low temperatures. The state of the film-substrate interface was studied. It was found that prolonged annealing of GaN films in nitrogen radicals shifts the composition to nitrogen excess. |
| Databáze: | OpenAIRE |
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