High-quality metamorphic HEMT grown on GaAs substrates by MBE
| Autor: | Yiping Zeng, Meiying Kong, Zhanping Zhu, Baoqiang Wang, Liang Pan, Xin Cao, Lijie Cui |
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| Rok vydání: | 2001 |
| Předmět: |
Electron density
Photoluminescence Condensed matter physics Chemistry business.industry Substrate (electronics) High-electron-mobility transistor Condensed Matter Physics Inorganic Chemistry chemistry.chemical_compound Ternary compound Hall effect Materials Chemistry Optoelectronics business Layer (electronics) Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. :210-213 |
| ISSN: | 0022-0248 |
| Popis: | Metamorphic high electron mobility transistor (M-HEMT) structures have been grown on GaAs substrates by molecular beam epitaxy (MBE). Linearly graded and the step-graded InGaAs and InAlAs buffet layers hal e been compared, and TEM, PL and low-temperature Hall have been used to analyze the properties of the buffer layers and the M-HEMT structure. For a single-delta-doped M-HEMT structure with an In0.53Ga0.47As channel layer and a 0.8 mum step-graded InAlAs buffer layer, room-temperature mobility of 9000 cm(2)/V s and a sheet electron density as high as 3.6 x 10(12)/cm(2) are obtained. These results are nearly equivalent to those obtained for the same structure grown on an InP substrate. A basic M-HEMT device with 1 mum gate was fabricated, and g(m) is larger than 400 mS/mm. (C) 2001 Elsevier Science B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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