| Autor: |
H.W. Lettenmayr, Christian G. Diskus, K. Lubke, H.W. Thim, Andreas Springer |
| Rok vydání: |
1992 |
| Předmět: |
|
| Zdroj: |
Electronics Letters. 28:980-981 |
| ISSN: |
1350-911X |
| DOI: |
10.1049/el:19920623 |
| Popis: |
The performance of planar field-effect controlled transferred electron oscillators with different combinations of layer thickness and doping concentration has been investigated. A negative differential resistance has even been obtained with 0.29μm thick 1.6 × 1017 cm-3n-doped samples. This is the first time a MESFET-like active layer has exhibited the Gunn effect and has successfully been operated as a TEO at 36 GHz. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
