Enhancement of drain current in AlGaN/GaN HEMT using AlN passivation
| Autor: | D. Nirmal, L. Arivazhagan, D. Godfrey, S. Bhagya Lakshmi, J. Ajayan, J. S. Rajkumar |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Passivation business.industry 020206 networking & telecommunications Algan gan 02 engineering and technology High-electron-mobility transistor Polarization (waves) 01 natural sciences 0103 physical sciences Band diagram 0202 electrical engineering electronic engineering information engineering Optoelectronics Drain current business |
| Zdroj: | SECOND INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE, SMART STRUCTURES AND APPLICATIONS: ICMSS-2019. |
| ISSN: | 0094-243X |
| Popis: | AlGaN/GaN HEMT with AlN passivation is proposed and investigated. Effectiveness of AlN passivation is analyzed and compared with SiN, SiO2, Al2O3, and HfO2 passivation materials. The performance of these passivation materials are analyzed using Technological Computer Aided Design (TCAD) simulation. The potential, polarization charge, energy band diagram of the GaN HEMT are analyzed. GaN device with AlN passivation exhibits higher drain current than other passivation materials. Hence, AlN passivation is an excellent passivation material for GaN-HEMT in higher drive current application. |
| Databáze: | OpenAIRE |
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