Effects of Residence Time and Reaction Conditions on the Deposition of SiC from Methyltrichlorosilane and Hydrogen
| Autor: | Chunnian Zhao, Litong Zhang, Cuiying Lu, Laifei Cheng, Fang Ye |
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| Rok vydání: | 2012 |
| Předmět: |
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Reaction mechanism Materials science Hydrogen Inorganic chemistry Analytical chemistry chemistry.chemical_element Activation energy Chemical vapor deposition Atmospheric temperature range Condensed Matter Physics Methyltrichlorosilane chemistry.chemical_compound chemistry Materials Chemistry Ceramics and Composites Reactivity (chemistry) Deposition (chemistry) |
| Zdroj: | International Journal of Applied Ceramic Technology. 9:642-649 |
| ISSN: | 1546-542X |
| Popis: | The overall growth kinetics of silicon carbide films deposited from the mixture of methyltrichlorosilane (MTS) and hydrogen were determined by a magnetic suspension microbalance. The results show that three regions are distinguishable in the studied temperature range. In low temperatures ( |
| Databáze: | OpenAIRE |
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