Atomic Design of Polarity of GaN Films Grown on SiC(0001)

Autor:	Xie Mao-Hai, Wu Hua-Sheng, S. Y. Tong, Xu Shi-Hong, Dai Xianqi
Rok vydání:	2004
Předmět:	Materials science Physics and Astronomy (miscellaneous) Polarity (physics) business.industry Ab initio Optoelectronics Nanotechnology Substrate (electronics) Total energy business
Zdroj:	Communications in Theoretical Physics. 41:609-613
ISSN:	0253-6102
DOI:	10.1088/0253-6102/41/4/609
Popis:	Ab initio total energy calculations are used to determine the interface structure of GaN films grown on 6H-SiC(0001) with different substrate reconstructions. The results indicate that GaN films grown on bare SiC(0001) are of the Ga-polarity, while GaN films grown on SiC(0001) with Si adlayer are of the N-polarity if there is no N-Si interchange at the interface. With the interchange, the GaN films are of the Ga-polarity.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5bc96b59eb9c2288f0b8116bdf186f95 https://doi.org/10.1088/0253-6102/41/4/609 Zobrazit plný text záznamu