Temperature Dependence of Critical Device Parameters in 1 Gb Perpendicular Magnetic Tunnel Junction Arrays for STT-MRAM
| Autor: | C. Ching, Mahendra Pakala, S. Kim, Lin Xue, Liang Shurong, Chando Park, Jimmy Kan, Seung H. Kang, A. Kontos, S. Hassan, Wang Rongjun, Mangesh Bangar, Jaesoo Ahn, H. Chen |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Magnetoresistive random-access memory Materials science Temperature sensitivity Magnetoresistance Condensed matter physics 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Tunnel magnetoresistance 0103 physical sciences Perpendicular Electrical and Electronic Engineering 0210 nano-technology Device parameters Quantum tunnelling |
| Zdroj: | IEEE Transactions on Magnetics. 53:1-4 |
| ISSN: | 1941-0069 0018-9464 |
| DOI: | 10.1109/tmag.2016.2615816 |
| Popis: | This paper investigates the temperature-dependent behaviors of critical device parameters in 1 Gb perpendicular magnetic tunnel junction (pMTJ) arrays from 25 °C to 125 °C. Despite the fact that pMTJ (45-50 nm in diameter) attributes are generally degraded at elevated temperatures, this paper suggests that an adequate combination of critical device parameters can be obtained through systematic materials and process engineering, including H c (1760 Oe at 25 °C versus 750 Oe at 125 °C), H OFF ( |
| Databáze: | OpenAIRE |
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