Dual-Pearson Approach to Model Ion-Implanted Al Concentration Profiles for High-Precision Design of High-Voltage 4H-SiC Power Devices
| Autor: | Hidekatsu Onose, Kazuhiro Mochizuki |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Smoothness (probability theory)
Materials science business.industry Mechanical Engineering Monte Carlo method High voltage Condensed Matter Physics Ion Ion implantation Mechanics of Materials Simulated data Optoelectronics General Materials Science Power semiconductor device business Energy (signal processing) Simulation |
| Zdroj: | Materials Science Forum. :607-610 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.600-603.607 |
| Popis: | We demonstrate a Dual-Pearson approach to model ion-implanted Al concentration profiles in 4H-SiC for high-precision design of high-voltage power devices. Based on the Monte Carlo simulated data for 35-400 keV implantation, we determine the nine Dual-Pearson parameters and confirm precise reproduction of profiles of 1015-1021 cm-3 Al with sufficient smoothness. This leads to a direct incorporation of implanted Al profiles into a device simulator. The influence of dose and energy on channeling is also discussed from the view point of implantation-induced disorder in 4H-SiC. |
| Databáze: | OpenAIRE |
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