Ultra-thin gate oxides prepared by alternating current anodization of silicon followed by rapid thermal anneal
| Autor: | Chuang-Yuan Lee, Jenn-Gwo Hwu, Yung-Chieh Chen |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Silicon Anodizing business.industry Oxide Analytical chemistry chemistry.chemical_element Condensed Matter Physics Electronic Optical and Magnetic Materials Anode chemistry.chemical_compound chemistry Gate oxide Materials Chemistry Optoelectronics Wafer Electrical and Electronic Engineering business Quantum tunnelling Leakage (electronics) |
| Zdroj: | Solid-State Electronics. 45:1531-1536 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(01)00182-4 |
| Popis: | An advanced method to prepare ultra-thin ( |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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