Chemical Structure of HfO 2 /Si Interface with Angle-Resolved Synchrotron Radiation Photoemission Spectroscopy
Autor: | Liu Zheng-Tang, Liu Wen-Ting, Zhang Wen-Hua, Tan Tingting |
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Rok vydání: | 2008 |
Předmět: | |
Zdroj: | Chinese Physics Letters. 25:3750-3752 |
ISSN: | 1741-3540 0256-307X |
Popis: | Interfacial chemical structure of HfO2/Si (100) is investigated using angle-resolved synchrotron radiation photoemission spectroscopy (ARPES). The chemical states of Hf show that the Hf 4f binding energy changes with the probing depth and confirms the existence of Hf-Si-O and Hf-Si bonds. The Si 2p spectra are taken to make sure that the interfacial structure includes the Hf silicates, Hf silicides and SiOx. The metallic characteristic of the Hf-Si bonds is confirmed by the valence band spectra. The depth distribution model of this interface is established. |
Databáze: | OpenAIRE |
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