Chemical Structure of HfO 2 /Si Interface with Angle-Resolved Synchrotron Radiation Photoemission Spectroscopy

Autor:	Liu Zheng-Tang, Liu Wen-Ting, Zhang Wen-Hua, Tan Tingting
Rok vydání:	2008
Předmět:	Metal Chemical state Materials science Photoemission spectroscopy visual_art Chemical structure Binding energy visual_art.visual_art_medium General Physics and Astronomy Synchrotron radiation Angle-resolved photoemission spectroscopy Atomic physics Spectral line
Zdroj:	Chinese Physics Letters. 25:3750-3752
ISSN:	1741-3540 0256-307X
Popis:	Interfacial chemical structure of HfO2/Si (100) is investigated using angle-resolved synchrotron radiation photoemission spectroscopy (ARPES). The chemical states of Hf show that the Hf 4f binding energy changes with the probing depth and confirms the existence of Hf-Si-O and Hf-Si bonds. The Si 2p spectra are taken to make sure that the interfacial structure includes the Hf silicates, Hf silicides and SiOx. The metallic characteristic of the Hf-Si bonds is confirmed by the valence band spectra. The depth distribution model of this interface is established.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5bbfb3389c5653517a36d2194d67c840 https://doi.org/10.1088/0256-307x/25/10/063 Zobrazit plný text záznamu