Effect of current crowding on contact failure in heavily doped n+- and p+-silicon-on-insulator

Autor:	R. B. Irwin, C. C. Yeh, Catherine Vartuli, J. S. Huang, King-Ning Tu, J. L. Drown, T. L. Shofner, Chih Chen
Rok vydání:	2000
Předmět:	Materials science Condensed matter physics Polarity (physics) Mechanical Engineering Doping Current crowding Silicon on insulator Condensed Matter Physics Cathode law.invention Anode Mechanics of Materials law General Materials Science Contact failure Current (fluid)
Zdroj:	Journal of Materials Research. 15:2387-2392
ISSN:	2044-5326 0884-2914
DOI:	10.1557/jmr.2000.0343
Popis:	Stability of submicron contacts under high current density has been an outstanding reliability issue in advanced Si devices. Polarity effect of failure was observed in Ni and Ni2Si contacts on n+-Si and p+-Si. In this report, we studied the failure due to high current density in contacts to n+- and p+-silicon-on-insulator (SOI). We found similar polarity effects below certain current: the p+-SOI failed preferentially at the cathode, while the n+-SOI failed preferentially at the anode. At higher current, damage occurred at both contacts. The effect of current crowding was evident in both cases.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5bbed30dcebc12fa45df7553b52d4426 https://doi.org/10.1557/jmr.2000.0343 Zobrazit plný text záznamu Full text from SpringerLink