Crosslinked polymer-mixture gate insulator for high-performance organic thin-film transistors
| Autor: | Yong-Young Noh, Mi Hye Yi, Yun Ho Kim, Kwang-Suk Jang, Yun-Seo Choe, Ji-Heung Kim, Gi-Seong Ryu |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Fabrication
Materials science Gate dielectric 02 engineering and technology 010402 general chemistry 01 natural sciences law.invention Biomaterials chemistry.chemical_compound law Materials Chemistry Electrical and Electronic Engineering chemistry.chemical_classification Transistor Benzothiophene General Chemistry Polymer 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Electronic Optical and Magnetic Materials Hysteresis chemistry Chemical engineering Thin-film transistor Polymer blend 0210 nano-technology |
| Zdroj: | Organic Electronics. 36:171-176 |
| ISSN: | 1566-1199 |
| DOI: | 10.1016/j.orgel.2016.06.002 |
| Popis: | In this paper, we report on the fabrication of a crosslinked polymer-mixture gate insulator for high-performance organic thin-film transistors (TFTs). We used cyanoethylated pullulan (CEP) as a crosslinkable high-k polymer matrix and poly(ethylene-alt-maleic anhydride) (PEMA) as a polymeric crosslinking agent. Because PEMA has a high number of functional groups reactive to the hydroxyl groups of CEP, the use of PEMA is effective for minimizing the amount of remaining hydroxyl groups strongly related to the large current hysteresis and high off current of the organic TFTs. To investigate the potential of the CEP-PEMA mixture as a gate insulator, we fabricated 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) TFTs. The C8-BTBT TFT with the 60 nm-thick CEP-PEMA gate insulator showed excellent TFT performance with a field-effect mobility of 1.4 cm2/V s and an on/off ratio of 2.4 × 106. |
| Databáze: | OpenAIRE |
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