Liquid phase epitaxy of (Sn2)1−x (InSb)x solid solution layers

Autor:	D. Saparov, A. S. Saidov, A. Sh. Razzakov
Rok vydání:	2002
Předmět:	Diffraction Microprobe Materials science Physics and Astronomy (miscellaneous) chemistry Analytical chemistry chemistry.chemical_element Liquid phase SN2 reaction Heterojunction Epitaxy Indium Solid solution
Zdroj:	Technical Physics Letters. 28:927-928
ISSN:	1090-6533 1063-7850
DOI:	10.1134/1.1526886
Popis:	Epitaxial layers of (Sn2)1−x (InSb)x solid solutions were grown from an indium-based solution melt confined between two horizontal GaAs substrates in a temperature interval from 325 to 200°C. Scanning microprobe and X-ray diffraction investigations of the GaAs-(Sn2)1−x (InSb)x heterostructures showed that crystallographic perfection of the epitaxial layers depends on the epitaxial growth conditions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5ba708f13cc227cd20981b7f19066fd7 https://doi.org/10.1134/1.1526886 Zobrazit plný text záznamu Plný text ve formátu PDF