Effect of annealing on performance of ZnO thin film transistors
| Autor: | Bada Kim, Do Hyung Lee, Geum Ran Yi, Chang Kyo Kim, Han Sol Kim |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry Annealing (metallurgy) 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences Threshold voltage Zno nanoparticles Thin-film transistor Optoelectronics General Materials Science Thin film 0210 nano-technology business |
| Zdroj: | Molecular Crystals and Liquid Crystals. 678:43-52 |
| ISSN: | 1563-5287 1542-1406 |
| Popis: | ZnO thin film transistors (TFTs) were fabricated through annealing of ZnO thin films at temperatures ranging from 250 °C to 400 °C. ZnO nanoparticles (NPs) synthesized via a sol-gel method ... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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