Controlling the demagnetizing field of an in-plane free layer by exchange coupling with a perpendicular multilayer
| Autor: | Kaan Oguz, Karsten Rode, J. M. D. Coey, Yong Chang Lau |
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| Rok vydání: | 2013 |
| Předmět: |
Coupling
Materials science Solid-state physics Condensed matter physics Demagnetizing field Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Magnetization Tunnel magnetoresistance Phenomenological model Perpendicular Current density |
| Zdroj: | The European Physical Journal B. 86 |
| ISSN: | 1434-6036 1434-6028 |
| Popis: | The demagnetizing field of a Co50Fe50 free layer in an in-plane micron-sized magnetic tunnel junction (MTJ) can be partially compensated by exchange coupling with a [Co90Fe10/Pt] N multilayer with perpendicular magnetic anisotropy via a Ru interlayer. The perpendicular anisotropy for N = 5 is optimized for nominal CoFe and Pt thickness of 0.4 nm and 1.0 nm, respectively. An increase of tunnel magnetoresistance (TMR) from 2% to 75% is observed in MTJs as the free layer thickness, t varies from 1.0 nm to 3.0 nm. A phenomenological model is developed to interpret the TMR dependence in terms of the free layer magnetization rotation from in-plane to out-of-plane with decreasing t, a consequence of interlayer exchange coupling with the perpendicular multilayer. We suggest that this strategy could significantly reduce the switching current density in such MTJs. |
| Databáze: | OpenAIRE |
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