| Popis: |
In this paper, we present investigations of electron hopping conduction by measuring the temperature dependence of electrical resistivity of n- CdAs2 semiconductor. The resistivity was measured without magnetic field as well as in its presence. The experimental results indicate that below about 12.6 K, the hopping law is the dominant mechanism in our insulating sample. In the absence of a magnetic field, the temperature dependence of resistivity follows two different Efros-Shklovkii (ES) Variable Range Hopping (VRH) mechanisms () with different pre-exponential factor and different values. However, the magnetic field induced a clear crossover from ES VRH transport to another hopping exponent. In addition, no Mott VRH () is observed, suggesting that the density of states (DOS) is not a constant near the Fermi energy. |
