Characterization of Bulk-Grown Hg1-xcdxTe

Autor:	H.J. Zuo, R.N. Andrews, G.M. Janowski, R.D. Griffin
Rok vydání:	1991
Předmět:	Materials science business.industry Optoelectronics General Medicine business Characterization (materials science)
Zdroj:	Proceedings, annual meeting, Electron Microscopy Society of America. 49:902-903
ISSN:	2690-1315 0424-8201
DOI:	10.1017/s0424820100088828
Popis:	The II-VI semiconducting compounds are of particular interest due to the ability to compositionally tune them to detect infrared radiation in the 0.5 to 30 μm range. With the demand for advanced imaging systems, there is an immediate need for bulk II-VI materials with improved compositional homogeneity and structural perfection. The performance of optical semiconductors is very sensitive to the presence of defects such as dislocations, precipitates, and boundaries.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5b72e27a695b0f61ffae370fb6e33022 https://doi.org/10.1017/s0424820100088828 Zobrazit plný text záznamu