Determining indices of refraction for ThO2 thin films sputtered under different bias voltages from 1.2 to 6.5 eV by spectroscopic ellipsometry

Autor:	David D. Allred, William R. Evans
Rok vydání:	2006
Předmět:	Materials science Metals and Alloys Analytical chemistry Biasing Surfaces and Interfaces Sputter deposition Refraction Surfaces Coatings and Films Electronic Optical and Magnetic Materials Sputtering Ellipsometry Materials Chemistry Thin film Refractive index DC bias
Zdroj:	Thin Solid Films. 515:847-853
ISSN:	0040-6090
DOI:	10.1016/j.tsf.2006.07.045
Popis:	We used spectroscopic ellipsometry to determine the optical constants of seven ThO2 thin-film samples, thickness ranging between 28 and 578 nm, for the spectral range of 1.2 to 6.5 eV. The samples were deposited by biased radio-frequency sputtering at DC bias voltages between 0 and − 68 V. The index of refraction, n, does not depend on bias voltage, sputter pressure, deposition rate, or thickness. Specifically, the value of n at 3 eV is 1.86 ± 0.04 for the unbiased samples and 1.86 ± 0.04 for the biased samples. The average value of n at 3 eV for the thicker samples (d ≥ 50 nm) was 1.87 ± 0.05, and 1.85 ± 0.02 for the thinner samples (d ≤ 50 nm).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5b6a161a37bf6fe2c4dd8afc3aed75bf https://doi.org/10.1016/j.tsf.2006.07.045 Zobrazit plný text záznamu Full Text from ScienceDirect