Evolution of hydrogen induced defects during annealing of plasma treated Czochralski silicon
| Autor: | Bård Tøtdal, John C. Walmsley, Alexander Ulyashin, Randi Holmestad, H. Nordmark |
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| Rok vydání: | 2006 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Silicon Hydrogen Annealing (metallurgy) Atomic force microscopy Doping technology industry and agriculture Analytical chemistry chemistry.chemical_element Plasma Surface finish Crystallography chemistry Transmission electron microscopy Instrumentation |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 253:176-181 |
| ISSN: | 0168-583X |
| DOI: | 10.1016/j.nimb.2006.10.043 |
| Popis: | Transmission electron microscopy (TEM) and atomic force microscopy (AFM) are used to study the temperature evolution of hydrogen plasma induced defects in silicon. Hydrogen plasma treated n- and p-doped Czochralski silicon samples were annealed at temperatures between 200 and 1000 °C for up to 10 h in air. Platelets are formed on {1 1 1} and {1 0 0} crystallographic planes. The structural defects are similar in n-type and p-type material. Small defects at the surface anneal out at temperatures above 400 °C and {1 1 1} platelets start to dissolve above 500 °C, except in highly p-doped samples where the platelets are stable up to 600 °C. The hydrogen penetrates deeper into a low doped than a high doped sample, resulting in platelet formation deeper into the sample. At annealing temperatures above 800 °C, an amorphous oxide layer forms at the surface of the sample. New platelets form after 1 h annealing at 1000 °C. The roughest surface is found in highly n-doped samples, hydrogenated at high plasma frequency for long exposure times. For high annealing temperatures the roughness decreases. |
| Databáze: | OpenAIRE |
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