The effect of doping profile variations upon deep submicrometer MOSFET's
| Autor: | J. R. Brews, Ziye Zhou, Juan Buxo |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Materials science
Condensed matter physics Subthreshold conduction Analytical chemistry Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Exponential function Sensitivity (control systems) Electrical and Electronic Engineering Current (fluid) Communication channel Doping profile |
| Zdroj: | Microelectronic Engineering. 28:155-161 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(95)00035-7 |
| Popis: | The variations in current induced by variations in the (horizontal) doping profile between channel and drain or source can be described in terms of variations in the effective channel length L EFF induced by the variations in the doping profile of source or drain. Sensitivity to profile variations becomes severe as L EFF → 0, because the current in the L EFF → 0 regime depends exponentially on the barrier potential. Likewise, because of the exponential dependence of current on potential in the subthreshold region, sensitivity is particularly strong in subthreshold for variations in the (vertical) channel profile that determines the device threshold and turn-off. The centroid of the vertical profile must be controlled to sub-Debye length accuracy to keep subthreshold current variations below a few percent. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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