The bulk amorphous A3B5 semiconductor: Technological and physical aspects
| Autor: | S. V. Demishev, V. I. Larchev, G. G. Skrotskaya, A. G. Lyapin, Svetlana Popova, M. M. Aleksandrova, N. E. Sluchanko, Yu. V. Kosichkin |
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| Rok vydání: | 1987 |
| Předmět: |
Materials science
Condensed matter physics business.industry Condensed Matter Physics Amorphous phase System a Electronic Optical and Magnetic Materials Amorphous solid Gallium antimonide chemistry.chemical_compound Semiconductor chemistry Electrical resistivity and conductivity Polyamorphism Materials Chemistry Ceramics and Composites Relaxation (physics) business |
| Zdroj: | Journal of Non-Crystalline Solids. :1459-1462 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/0022-3093(87)90350-4 |
| Popis: | Electrophysical properties of the bulk amorphous A 3 B 5 semiconductor a-GaSb are studied for the first time. It is shown that in amorphous-crystalline gallium antimonide system a metal-insulator transition can be induced as the content of the amorphous phase increases gradually. Analysis of the relaxation of electrical conductivity demonstrated the complex nature of amorphous phase in GaSb which can be subdivided into some units. |
| Databáze: | OpenAIRE |
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