Forming-free and multilevel resistive switching properties of hydrothermally synthesized hexagonal molybdenum oxide microrods
| Autor: | Shivaji N. Tayade, Bhagyashri B. Kamble, Rajanish K. Kamat, Tukaram D. Dongale, Swapnil R. Patil, N. B. Mullani, Tae Joo Park, Deok-kee Kim |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Diffraction Resistive touchscreen Photoluminescence Materials science Scanning electron microscope business.industry Condensed Matter Physics Thermal conduction 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials symbols.namesake 0103 physical sciences symbols Optoelectronics Electrical and Electronic Engineering Crossbar switch business Raman spectroscopy Voltage |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 32:12490-12502 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-021-05883-w |
| Popis: | In recent years, resistive switching memory devices are attracted much attention for high-density non-volatile memory applications owing to their cell scalability, multilevel operations, and 3D capability in crossbar memory arrays. In this work, we report the forming-free and multilevel resistive switching properties of hydrothermally synthesized hexagonal molybdenum oxide (h-MoO3) microrods. The formation of h-MoO3 microrods was confirmed by using the X-ray diffraction technique and scanning electron microscopy. Different chemical properties of h-MoO3 microrods were determined by energy-dispersive X-ray, photoluminescence, Raman, and X-ray photoelectron spectroscopic techniques. The memory device was fabricated in a Ti/MoO3/FTO structure and its bipolar resistive switching properties were investigated. The memory device shows voltage-dependent tunable I-V properties and shows electroforming-free operation. Moreover, we have calculated the different memristive properties and showed that the device possesses double-valued charge-magnetic flux characteristics, suggesting the dominance of memristive properties in the Ti/MoO3/FTO device. We further explored the multilevel resistive switching property of the device by varying the RESET voltage. The Ti/MoO3/FTO memristive device can able to show four distinct resistive states during endurance and retention tests. The statistical analysis suggested that the device has less variation during the cycle-to-cycle operation. The device conduction mechanism was obtained by fitting different charge transport models, and a possible resistive switching mechanism is presented based on the observed multilevel resistive switching effect of the Ti/MoO3/FTO memristive device. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink