The impact of dopant contents on structures, morphologies and optical properties of Eu doped Ga2O3 films on GaAs substrate
| Autor: | Tooru Tanaka, Congyu Hu, Qixin Guo, Zhengwei Chen, Katsuhiko Saito, Kazuo Nishihagi, Xu Wang, Makoto Arita |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Dopant business.industry Doping Biophysics chemistry.chemical_element 02 engineering and technology General Chemistry Substrate (electronics) Electroluminescence 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Biochemistry Atomic and Molecular Physics and Optics Pulsed laser deposition Surface coating chemistry 0103 physical sciences Optoelectronics Thin film 0210 nano-technology business Europium |
| Zdroj: | Journal of Luminescence. 194:374-378 |
| ISSN: | 0022-2313 |
| DOI: | 10.1016/j.jlumin.2017.10.054 |
| Popis: | We have fabricated the europium (Eu) doped Ga 2 O 3 thin films on GaAs substrate by using pulsed laser deposition. The impact of Eu contents on structure, surface morphology, and optical properties are systematically investigated. We demonstrate that the Eu contents in Ga 2 O 3 films can be controlled by adjusting the Eu contents in the targets. Moreover, all the films exhibited monoclinic Ga 2 O 3 structure and smooth surface. We also clearly observe intense red emissions at 611 nm for the Eu doped Ga 2 O 3 films. It is believed that this work paves the way for the development of GaAs-based red electroluminescence devices by using wide bandgap Ga 2 O 3 as the host materials for Eu 3+ ions. |
| Databáze: | OpenAIRE |
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