High-power, high-temperature operation of AlInGaAs-AlGaAs strained single-quantum-well diode lasers
| Autor: | H.K. Choi, Christine A. Wang, D.F. Kolesar, R.L. Aggarwal, James N. Walpole |
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| Rok vydání: | 1991 |
| Předmět: |
Materials science
business.industry Heterojunction Heat sink Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Gallium arsenide chemistry.chemical_compound Optics chemistry Operating temperature law Optoelectronics Electrical and Electronic Engineering business Electrical efficiency Quantum well Diode |
| Zdroj: | IEEE Photonics Technology Letters. 3:857-859 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/68.93240 |
| Popis: | Strained layer AlInGaAs-AlGaAs graded-index separate-confinement heterostructure single-quantum-well diode lasers with cavity width and length of 500 and 1000 mu m, respectively, have been operated continuous-wave (CW) at heatsink temperatures up to 125 degrees C, with output power up to 4.9 W per facet and power efficiency as high as 49% measured at 10 degrees C. Promising results have been obtained in initial reliability tests on uncoated devices at heatsink temperatures of 10 and 50 degrees C. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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