Comparison of dislocation mobility in LiF measured by direct and indirect methods

Autor:	Yu. Z. Estrin, G. G. Knab, A. A. Urusovskaya
Rok vydání:	1976
Předmět:	Dislocation creep Crystallography Materials science Condensed matter physics Dynamic loading Effective stress Peierls stress Stress relaxation Dislocation velocity Dislocation Condensed Matter Physics Electronic Optical and Magnetic Materials
Zdroj:	Physica Status Solidi (a). 36:397-402
ISSN:	1521-396X 0031-8965
Popis:	A comparison is made of the effective stress dependence of the dislocation velocity V in LiF crystals as determined by stress relaxation tests and by direct etch pit measurements. The stress relaxation technique used permits to study both the effective stress dependence of V and the evolution of the total and mobile dislocation densities during the dynamic loading of the crystals. The data obtained by the two methods are in good agreement. It is shown that the density of mobile dislocations is decreasing with the strain, whereas the total dislocation density is growing during the dynamic straining to 1%. [Russian Text Ignored]
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5b2b16ac982669e7fe935047cdf68ded https://doi.org/10.1002/pssa.2210360143 Zobrazit plný text záznamu Plný text