Incremental Enhancement of SEU Hardened 90 nm CMOS Memory Cell
| Autor: | Nadim F. Haddad, Robert A. Reed, Bin Li, Robert A. Weller, Andrew T. Kelly, Marcus H. Mendenhall, John C. Rodgers, Jason F. Ross, Reed K. Lawrence, Kevin M. Warren |
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| Rok vydání: | 2011 |
| Předmět: |
Nuclear and High Energy Physics
Hardware_MEMORYSTRUCTURES Materials science Sram cell Hardware_PERFORMANCEANDRELIABILITY Upset law.invention Capacitor Nuclear Energy and Engineering CMOS law Single event upset Electronic engineering Static random-access memory Electrical and Electronic Engineering Resistor Radiation hardening |
| Zdroj: | IEEE Transactions on Nuclear Science. 58:975-980 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2011.2128882 |
| Popis: | SEU enhancements were introduced into a radiation hardened 90 nm CMOS technology to achieve upset immunity. An incremental enhancement approach that enables various SEU/performance trade-off was demonstrated on the same basic SRAM cell to achieve various degrees of hardness, by the selective utilization of enhancement features. Single event upset testing, as well as MRED simulation, have demonstrated a significant enhancements achieved with a minimal performance penalty. |
| Databáze: | OpenAIRE |
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