Light Extraction Efficiency Improvement by Curved GaN Sidewalls in InGaN-Based Light-Emitting Diodes
| Autor: | Guo Enqing, Li Zhi, Wang Guohong, Wei Tongbo, Zhang Yiyun, Yi Xiaoyan, Li Jing |
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| Rok vydání: | 2012 |
| Předmět: |
Scriber
Materials science business.industry Wide-bandgap semiconductor Gallium nitride Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Semiconductor laser theory chemistry.chemical_compound Optics chemistry Etching (microfabrication) law Optoelectronics Electrical and Electronic Engineering business Light-emitting diode Diode |
| Zdroj: | IEEE Photonics Technology Letters. 24:243-245 |
| ISSN: | 1941-0174 1041-1135 |
| Popis: | Polygonal GaN sidewalls are fabricated using a laser scriber and a wet-etching process. After a two-step laser scribing process and a hot acid etching treatment, curved GaN sidewalls are formed consisting of the chemically stable (10-1-2) crystallographic plane of GaN epilayer and the laser-cutting facets. Compared to light-emitting diodes (LEDs) with vertical and inclined GaN sidewalls, light output power of LEDs with these curved GaN sidewalls exhibits an improvement of 10.2% and 6.8%, respectively. I-V curve shows that there is no deterioration to the curved-sidewall LEDs' electronic properties. This enhancement of light output power is also confirmed by numerical simulations using the ray-tracing method. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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