High efficiency AlGaInN-based light emitting diode in the 360–380 nm wavelength range
| Autor: | Masahiro Kimura, Shunsuke Kawano, Ryohei Takaki, Kenji Yamashita, Kenji Morioka, Daisuke Sato, Suguru Nohda, Hisao Sato, Tomoya Sugahara, Hong Xing Wang, Takashi Mizobuchi, Akihiko Dempo, Shiro Sakai, Naoki Wada, Tetsuya Tanahashi |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Indium nitride business.industry Gallium nitride Chemical vapor deposition Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Wavelength chemistry.chemical_compound Optics chemistry law Sapphire Optoelectronics Quantum efficiency Metalorganic vapour phase epitaxy business Light-emitting diode |
| Zdroj: | physica status solidi (a). 200:102-105 |
| ISSN: | 1521-396X 0031-8965 |
| DOI: | 10.1002/pssa.200303478 |
| Popis: | High performance LEDs emitting in the wavelength range 360–380 nm, are fabricated on sapphire substrates by one-time metalorganic chemical vapor deposition (MOCVD) without using epitaxial lateral overgrowth (ELO) or similar techniques. By improving layer structures and growth conditions, the output power of the LEDs was much improved. The light output power of the LEDs at an injection current of 20 mA is 3.2 mW, 2.5 mW and 1 mW at wavelengths of 378 nm, 373 nm and 363 nm, which correspond to an external quantum efficiency of 4.8%, 3.8% and 1.4%, respectively. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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