The growth mechanism of SiC film from polyimide LB film

Autor:	Pingsheng He, Bangkun Jin, Yongning Sheng, Beifang Yang
Rok vydání:	2003
Předmět:	Silicon Diffusion Mineralogy chemistry.chemical_element General Chemistry Activation energy Condensed Matter Physics Chemical engineering chemistry General Materials Science Growth rate Pyrolysis Carbon Polyimide
Zdroj:	Journal of Physics and Chemistry of Solids. 64:339-342
ISSN:	0022-3697
Popis:	The growth mechanism of SiC film produced by pyrolysis polyimide LB film was discussed. AES result showed that the atoms of C and Si form a gradient distribution in the pyrolyzed SiC films. Parameters including the diffusion co-efficiency of carbon atoms, growth rate of SiC film, and the activation energy were estimated. We suggest that the SiC formation process is controlled by the diffusion of silicon atoms, and the whole growth rate depends on the reaction of Si and C.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5b12193d5500945f5f34df48849f8fc7 https://doi.org/10.1016/s0022-3697(02)00337-2 Zobrazit plný text záznamu Full Text from ScienceDirect