Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes
| Autor: | J. R. Söderström, T. C. McGill, L.J. Mahoney, K.M. Molvar, Elliott R. Brown, C. D. Parker |
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| Rok vydání: | 1991 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Electronic oscillator Oscillation business.industry Superlattice Resonant-tunneling diode Integrated circuit Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Condensed Matter::Materials Science law Optoelectronics business Quantum tunnelling Diode Power density |
| Zdroj: | Applied Physics Letters. 58:2291-2293 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.104902 |
| Popis: | Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double‐barrier resonant‐tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W cm−2, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid‐state electronic oscillator at room temperature. |
| Databáze: | OpenAIRE |
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