Intrinsic Failure Mechanisms in GaN-on-Si Power Transistors

Autor:	Robert Strittmatter, Alex Lidow, Shengke Zhang, Alejandro Pozo
Rok vydání:	2020
Předmět:	Semiconductor Materials science Control and Systems Engineering business.industry Margin (machine learning) Qualification testing Energy Engineering and Power Technology Power semiconductor device Stress measurement Electrical and Electronic Engineering Large group business Reliability engineering
Zdroj:	IEEE Power Electronics Magazine. 7:28-35
ISSN:	2329-9215 2329-9207
Popis:	Standard qualification testing for semiconductors typically involves stressing devices at-or-near the limits specified in their data sheets for a prolonged period of time, or for a certain number of cycles. The goal of qualification testing is to have zero failures out of a large group of parts tested. By testing parts to the point of failure, an understanding of the amount of margin between the data sheet limits can be developed, but more importantly, an understanding of the intrinsic failure mechanisms of the semiconductor can be found.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5b06717e166ad209cddb6cbbc95bf279 https://doi.org/10.1109/mpel.2020.3033651 Zobrazit plný text záznamu