High-rate deposition of a-Si:H thin layers for high-performance silicon heterojunction solar cells
| Autor: | Chie-Sheng Liu, Lu‐Sheng Hong, Ian‐Wei Chen, Chia-Yin Wu, Hseuh‐Chuan Lee |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Passivation Renewable Energy Sustainability and the Environment Heterojunction Chemical vapor deposition Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Chemical engineering Wafer Crystalline silicon Electrical and Electronic Engineering Layer (electronics) Deposition (chemistry) |
| Zdroj: | Progress in Photovoltaics: Research and Applications. 21:326-331 |
| ISSN: | 1062-7995 |
| DOI: | 10.1002/pip.1189 |
| Popis: | In this paper, we describe a technique for high-quality interface passivation of n-type crystalline silicon wafers through the growth of hydrogenated amorphous Si (a-Si:H) thin layers using conventional plasma-enhanced chemical vapor deposition. We investigated the onset of crystallization of the a-Si:H layers at various deposition rates and its effect on the surface passivation properties. Epitaxial growth occurred, even at a low substrate temperature of 90 °C, when the deposition rate was as low as 0·5 A/s; amorphous growth occurred at temperatures up to 150 °C at a higher deposition rate of 4·2 A/s. After optimizing the intrinsic a-Si:H layer deposition conditions and then subjecting the sample to post-annealing treatment, we achieved a very low surface recombination velocity (7·6 cm/s) for a double-sided intrinsic a-Si:H coating on an n-type crystalline silicon wafer. Under the optimized conditions, we achieved an untextured heterojunction cell efficiency of 16·7%, with a high open-circuit voltage (694 mV) on an n-type float-zone Si substrate. On a textured wafer, the cell efficiency was further enhanced to 19·6%. Copyright © 2011 John Wiley & Sons, Ltd. |
| Databáze: | OpenAIRE |
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