Persistent Conductivity in n-Type 3C-SiC Observed at Low Temperatures

Autor:	Heiko B. Weber, Michel Bockstedte, Michael Krieger, Martin Hundhausen, Gerhard Pensl, Hiroyuki Nagasawa, Martin Hauck, Felix Fromm, Svetlana Beljakowa
Rok vydání:	2014
Předmět:	Electron density Materials science Mechanical Engineering Doping Analytical chemistry Atmospheric temperature range Conductivity Condensed Matter Physics symbols.namesake Bunches Mechanics of Materials Hall effect symbols General Materials Science Raman spectroscopy Stacking fault
Zdroj:	Materials Science Forum. :265-268
ISSN:	1662-9752
Popis:	Persistent conductivity in n-type 3C-SiC is investigated in a wide temperature range down to 3 K by Hall effect, admittance spectroscopy, low temperature photoluminescence (LTPL) and Raman spectroscopy. We propose a model, which clearly explains the persistent behavior of the electron density n below 50 K. It is experimentally verified that the persistent conductivity results from doped SF bunches, which can be considered as nanopolytype inclusions in 3C-SiC.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5aef41c5e02686db0e1075bc930aa8a4 https://doi.org/10.4028/www.scientific.net/msf.778-780.265 Zobrazit plný text záznamu