Analysis of highly doping with boron from spin-on diffusing source
| Autor: | Francis E. H. Tay, Daniel Puiu Poenar, Ciprian Iliescu, Mihaela Carp, Jianmin Miao |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Materials science
Diffusion Doping Analytical chemistry chemistry.chemical_element Nanotechnology Surfaces and Interfaces General Chemistry Surface finish Condensed Matter Physics Surfaces Coatings and Films Surface micromachining chemistry Diffusion process Materials Chemistry Surface roughness Boron Surface states |
| Zdroj: | Surface and Coatings Technology. 198:309-313 |
| ISSN: | 0257-8972 |
| Popis: | A large number of MEMS devices require thin diaphragms or cantilevers fabricated using bulk or surface micromachining. This paper presents a characterization of heavily doped p ++ layers (well known as efficient etch-stop layers for anisotropic etching of Si in alkaline solution) processed using spin-on diffusants (SOD) sources. The doping profiles were simulated using TSUPREM4 and measured using SIMS. The stress induced in such layers—as resulted from our process—was 25 …40 MPa (tensile). The surface roughness was also investigated, and the measured average value R a =30 nm (achieved after a diffusion of 5 h at 1150 °C) can be associated with the effect of the oxidation that took place simultaneously with the diffusion process. The paper presents the advantages and disadvantages offered by spin-on doping sources for diffusing heavily doped p ++ layers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect