A Study of Impact of Incorporating Locations of Yttrium on the Properties of GeOx/HfO2-based/TiN Gate Stack Based on Material Reaction

Autor:	Y.H. Tsai, C.H. Chien, A.S. Shih, W.K. Yeh, C.H. Chou, Y.H. Lu
Rok vydání:	2018
Předmět:	Materials science chemistry business.industry Gate stack chemistry.chemical_element Optoelectronics Yttrium Tin business
Zdroj:	Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2018.b-5-05
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5ae8ed0cf02bc1b38deef5514f74f58d https://doi.org/10.7567/ssdm.2018.b-5-05 Zobrazit plný text záznamu