Characterization of oxide layers on GaAs substrates
| Autor: | N.J. Mason, P.J. Walker, R.T Carline, C. Pickering, Brian K. Tanner, Dan A. Allwood |
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| Rok vydání: | 2000 |
| Předmět: |
Materials science
Metals and Alloys Thermal desorption Oxide Analytical chemistry Surfaces and Interfaces Activation energy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Characterization (materials science) chemistry.chemical_compound Chemical species chemistry Desorption Materials Chemistry Surface roughness Wafer |
| Zdroj: | Thin Solid Films. 364:33-39 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(99)00959-1 |
| Popis: | Oxide layers on undoped GaAs substrates have been assessed by grazing incidence X-ray reflectivity (GIXR), spectroscopic ellipsometry (SE), surface photoabsorption (SPA) and atomic force microscopy (AFM). In addition to providing a comparison between different measurement techniques, these new data improve the understanding of the structure and thermal desorption of oxides typical to GaAs substrates. Epi-ready GaAs wafers typically have an estimated oxide layer thickness of between 23–30 A and exhibit a surface roughness of 2–3 A. Furthermore, a significant change in the oxide chemical species through the film is indicated. An activation energy for desorption of Ga 2 O 3 of 2.0 eV is calculated, whilst partial deoxidation of acid-polished GaAs suggests oxide removal proceeds as island shrinkage of successive oxide layers. |
| Databáze: | OpenAIRE |
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