Annealing temperature effects on the electrical properties of (K, Na) NbO3 thin film fabricated by a sol-gel process with a citrate precursor solution
| Autor: | Jing-Song Liu, Jinhao Qiu, Kongjun Zhu, M. Cheng, Linlin Yao, Qilin Gu, Jing Wang |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Annealing (metallurgy) Niobium chemistry.chemical_element 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics Microstructure 01 natural sciences Ferroelectricity Electronic Optical and Magnetic Materials chemistry.chemical_compound Chemical engineering chemistry 0103 physical sciences Thin film Niobium pentoxide 0210 nano-technology Sol-gel |
| Zdroj: | Ferroelectrics. 493:47-53 |
| ISSN: | 1563-5112 0015-0193 |
| DOI: | 10.1080/00150193.2016.1133213 |
| Popis: | Utilizing the comparatively low cost niobium pentoxide (Nb2O5) as raw material, (K,Na)NbO3(KNN) thin films were deposited onto Ti substrate by a sol–gel non-alkoxide process. The effects of annealing temperature on the phase, morphology, dielectric, and ferroelectric properties of KNN thin films were investigated. KNN thin films without impurities were obtained above 700°C, and the microstructure of all films were dense and uniform. A maximum dielectric constant of 480 was obtained in the film annealed at 700°C, which is comparable to the film prepared from niobium ethoxide. |
| Databáze: | OpenAIRE |
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