Optical defect centers and surface morphology of isotopically enriched diamond layers in designer diamond anvils

Autor:	Yogesh K. Vohra, Paul A. Baker, Randolph S. Peterson, Shane A. Catledge, Samuel T. Weir
Rok vydání:	2005
Předmět:	Materials science Photoluminescence Argon Material properties of diamond Analytical chemistry General Physics and Astronomy chemistry.chemical_element Diamond engineering.material Diamond anvil cell symbols.namesake chemistry symbols engineering Thin film Raman spectroscopy Spectroscopy
Zdroj:	Journal of Applied Physics. 97:073504
ISSN:	1089-7550 0021-8979
Popis:	We have studied optical defect centers and surface morphology of isotopically enriched layers grown on diamond anvils by microwave plasma chemical vapor deposition for applications as designer diamond anvils in high-pressure diamond anvil cell devices. Various mixtures of methane isotopes were used to grow homoepitaxial diamond with C13 molar fractions of 0.01, 0.41, 0.83, and 0.99 as determined from Raman spectroscopy. Defect centers were studied at temperatures between 80 and 320K using micro-photoluminescence (PL) spectroscopy with an argon ion and krypton laser excitation source. The defect spectra were dominated by zero phonon lines (ZPL) from nitrogen-related defect centers at nominal energies of 1.945eV (640nm defect) and 2.156eV (575nm defect), especially for the non-(100) surfaces. Polished (100) surfaces fluoresced weakly. ZPL’s at 1.77 and 1.68eV are observed, but not for all isotopically mixed samples. The 1.77eV ZPL appears to be associated from the original diamonds, while the 1.68eV ZPL is ...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5ac923315b79c929ba1d996a128b8962 https://doi.org/10.1063/1.1872203 Zobrazit plný text záznamu