Enhancement of tunneling magnetoresistance by inserting a diffusion barrier in L10-FePd perpendicular magnetic tunnel junctions
| Autor: | Yang Lv, Mahdi Jamali, Danielle Reifsnyder Hickey, Zhengyang Zhao, Karl B. Schliep, K. Andre Mkhoyan, Delin Zhang, Ryan J. Wu, Hongshi Li, Xiaohui Chao, Junyang Chen, Patrick Quarterman, Jian-Ping Wang |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Magnetoresistance Spintronics Diffusion barrier Annealing (metallurgy) Tantalum chemistry.chemical_element 02 engineering and technology Tungsten 021001 nanoscience & nanotechnology 01 natural sciences Tunnel magnetoresistance chemistry 0103 physical sciences 0210 nano-technology Quantum tunnelling |
| Zdroj: | Applied Physics Letters. 112:152401 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.5019193 |
| Popis: | We studied the tunnel magnetoresistance (TMR) of L10-FePd perpendicular magnetic tunnel junctions (p-MTJs) with an FePd free layer and an inserted diffusion barrier. The diffusion barriers studied here (Ta and W) were shown to enhance the TMR ratio of the p-MTJs formed using high-temperature annealing, which are necessary for the formation of high quality L10-FePd films and MgO barriers. The L10-FePd p-MTJ stack was developed with an FePd free layer with a stack of FePd/X/Co20Fe60B20, where X is the diffusion barrier, and patterned into micron-sized MTJ pillars. The addition of the diffusion barrier was found to greatly enhance the magneto-transport behavior of the L10-FePd p-MTJ pillars such that those without a diffusion barrier exhibited negligible TMR ratios ( |
| Databáze: | OpenAIRE |
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