50 nm Pattern Printing by Narrowband Proximity X-Ray Lithography
| Autor: | Hiroshi Watanabe, Koji Kise, Kenji Marumoto, Kenji Itoga, Sunao Aya, Hideki Yabe, Hiroaki Sumitani |
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| Rok vydání: | 2002 |
| Předmět: | |
| Zdroj: | Japanese Journal of Applied Physics. 41:7550-7555 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | This paper describes one aspect of advanced proximity X-ray lithography, called second generation proximity X-ray lithography (PXL-II). The spectra absorbed in the resists containing special elements (e.g., Cl, S, P, Si and Br), which have an absorption edge within the exposure spectrum, become narrowband as compared with those in the conventional resist. In this paper, we investigated narrowband spectrum effects on resolution enhancement by using an optical image simulator and by carrying out some exposure experiments. As a result, it was found that the combination of a narrowband spectrum and the simple mask pattern bias is effective to enhance the resolution. In actual exposure experiments, the 50 nm line-and-space (L&S) patterns were formed at the wide gap of 10 µm by using a narrowband spectrum and mask pattern with biases of more than 20 nm. Moreover, by using the narrowband spectrum absorbed in the resist with Br content of 40 wt%, we indicated that the power absorbed in the resist is several times greater than that absorbed in the conventional resist. |
| Databáze: | OpenAIRE |
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