Characterization and Adhesion in Cu/Ru/SiO2/Si Multilayer Nano-scale Structure for Cu Metallization

Autor:	S. H. Venkatesh, D. R P Singh, Terry Alford, Nikhilesh Chawla
Rok vydání:	2012
Předmět:	Toughness Materials science Mechanical Engineering Metallurgy Delamination Analytical chemistry Substrate (electronics) Microstructure Mechanics of Materials Electrical resistivity and conductivity General Materials Science Thin film Nanoscopic scale Layer (electronics)
Zdroj:	Journal of Materials Engineering and Performance. 22:1085-1090
ISSN:	1544-1024 1059-9495
DOI:	10.1007/s11665-012-0359-0
Popis:	In this study, we have characterized the microstructure, resistivity, and dynamic deformation behavior of Cu/Ru/SiO2 and Cu/SiO2 samples under scratch loading conditions. Cu/Ru/SiO2 samples showed higher elastic recovery and hardness when compared to the Cu/SiO2 samples. In the case of Cu/Ru/SiO2 samples, Ru acts as a glue layer between the Cu and the SiO2 substrate providing both strength and toughness against dynamic loading. Hence, the critical load for delamination is higher for Cu/Ru/SiO2 samples compared to Cu/SiO2 samples. Our results show that Cu/Ru/SiO2 thin films present significant potential to be used in Cu metallization.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5ab9877ab75e7c62c3a904475e0c0ed9 https://doi.org/10.1007/s11665-012-0359-0 Zobrazit plný text záznamu Full text from SpringerLink