Modeling of energy distributions for plasma implantation
| Autor: | Nathan W. Cheung, Barry P. Linder |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Quantitative Biology::Tissues and Organs Physics::Medical Physics Surfaces and Interfaces General Chemistry Plasma Condensed Matter Physics Plasma-immersion ion implantation Surfaces Coatings and Films Ion Ion implantation Physics::Plasma Physics Materials Chemistry Plasma diagnostics Implant Dose rate Energy (signal processing) Biomedical engineering |
| Zdroj: | Surface and Coatings Technology. 136:132-137 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/s0257-8972(00)01042-2 |
| Popis: | Plasma immersion ion implantation (PIII) has significant advantages over conventional implantation in high dose and low energy implant applications. One potential drawback is the poly-energetic nature of pulsed PIII implantation. The contribution of low energy ions to the total implant dose has been computed for pulsed PIII. An analytical approach allows the extraction of the scaling of the dose of the low energy with the implant parameters. The developed models allow the engineering of the rise times, fall times, total pulse time, pulsing frequency, and plasma ion density to minimize the implant energy spread, while maximizing the dose rate. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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